Eu-doped GaN films grown on sapphire and GaAs substrates by RF magnetron sputtering
نویسندگان
چکیده
The growth of Eu-doped GaN (GaN:Eu) films has been performed on GaAs (100) substrates using RF magnetron sputtering method. The GaN layers exhibit a wurtzite structure. Substrate temperature and the pressure during the deposition do not influence the orientation of GaN:Eu films. After annealing of GaN films in NH3, a strong red luminescence at 622 nm due to Eu ions has been observed.
منابع مشابه
Nanocrystalline GaN and GaN:H Films Grown by RF-Magnetron Sputtering
The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N2/H2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (Ts ≤ 420K). The main effects resulting from the depo...
متن کاملBand-gap engineering of ZnO1-xSx films grown by rf magnetron sputtering of ZnS target
Structural and optical properties of ZnO1-хSх (0 ≤ x ≤ 1.0) thin films grown onto sapphire substrates (с-Al2O3) at 300 C by radio frequency (rf) magnetron sputtering of ZnS ceramic target are studied. A possibility of purposeful controlling sulfur content and, as consequence, ZnO1-хSх band gap energy via changing the ratio of the partial pressures of argon and oxygen are revealed. Linear depen...
متن کاملDeposition of aluminum-doped zinc oxide films by RF magnetron sputtering and study of their structural, electrical and optical properties
Highly oriented undoped and aluminum-doped ZnO (AZO) films in the (002) direction were prepared by RF magnetron sputtering on glass substrates with specifically designed ZnO targets containing different amounts of Al(OH) powder as doping 3 source. A systematic study of the influence of deposition parameters such as Al(OH) content in the target, the target–substrate 3 distance (D ), deposition t...
متن کاملHigh quality MgB 2 thin films in - situ grown by dc magnetron sputtering
Thin films of the recently discovered magnesium diboride (MgB2) intermetallic superconducting compound have been grown using a magnetron sputtering deposition technique followed by in-situ annealing at 830°C. High quality films were obtained on both sapphire and MgO substrates. The best films showed maximum Tc = 35 K (onset), a transition width of 0.5 K, a residual resisitivity ratio up to 1.6,...
متن کاملThe effect of sputtering RF power on structural, optical and electrical properties of CuO and CuO2 thin films
In this paper, the RF power change effect on the structural, optical and electrical properties of CuO thin films prepared by RF reactive magnetron sputtering deposited on glass substrates are studied. At first, the thin films are prepared at 150, 280, 310 and 340W respectively. Then, the films are characterized by XRD, AFM, Uv-visible and four-point probe analysis respectively. The results show...
متن کامل